IXFN44N100P vs IXFN44N100Q3 vs IXFN44N50

 
PartNumberIXFN44N100PIXFN44N100Q3IXFN44N50
DescriptionMOSFET 44 Amps 1000V 0.22 RdsMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/38AMOSFET 500V 44A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleChassis MountChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV1 kV500 V
Id Continuous Drain Current37 A38 A44 A
Rds On Drain Source Resistance220 mOhms220 mOhms120 mOhms
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V30 V20 V
Qg Gate Charge305 nC264 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation890 W960 W520 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height12.22 mm-9.6 mm
Length38.23 mm-38.23 mm
SeriesIXFN44N100IXFN44N100IXFN44N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar Power MOSFET HiPerFET--
Width25.42 mm-25.42 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min20 S-42 S
Fall Time54 ns-30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time68 ns300 ns60 ns
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time90 ns-100 ns
Typical Turn On Delay Time60 ns-30 ns
Unit Weight1.058219 oz1.058219 oz1.058219 oz
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