IXFN44N80P vs IXFN44N80Q3 vs IXFN44N80

 
PartNumberIXFN44N80PIXFN44N80Q3IXFN44N80
DescriptionMOSFET 36 Amps 800VMOSFET Q3Class HiPerFET Pwr MOSFET 800V/37AMOSFET 44 Amps 800V 0.145 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleChassis MountChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V800 V
Id Continuous Drain Current39 A37 A44 A
Rds On Drain Source Resistance190 mOhms165 mOhms165 mOhms
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V30 V20 V
Qg Gate Charge200 nC185 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation694 W780 W700 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height12.22 mm-9.6 mm
Length38.23 mm-38.23 mm
SeriesIXFN44N80IXFN44N80IXFN44N80
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHV HiPerFET Power MOSFET--
Width25.42 mm-25.42 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min27 S--
Fall Time27 ns-24 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns300 ns48 ns
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns-100 ns
Typical Turn On Delay Time28 ns-35 ns
Unit Weight1.058219 oz1.058219 oz1.058219 oz
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