IXFN80N50 vs IXFN80N10S1 vs IXFN80N48

 
PartNumberIXFN80N50IXFN80N10S1IXFN80N48
DescriptionMOSFET 500V 80AMOSFET N-CH 480V 80A SOT-227B
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleChassis Mount--
Package / CaseSOT-227-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance55 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation780 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHyperFET--
PackagingTube--
Height9.6 mm--
Length38.23 mm--
SeriesIXFN80N50--
Transistor Type1 N-Channel--
Width25.42 mm--
BrandIXYS--
Forward Transconductance Min70 S--
Fall Time27 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time102 ns--
Typical Turn On Delay Time61 ns--
Unit Weight1.058219 oz--
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