PartNumber | IXFN90N85X | IXFN90N30 | IXFN90N170SK |
Description | MOSFET 850V/90A Ultra Junction X-Class | MOSFET 90 Amps 300V 0.033 Rds | MOSFET SICARBIDE-DISCRETE MOSFET (MIN |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Package / Case | SOT-227-4 | SOT-227-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 850 V | 300 V | - |
Id Continuous Drain Current | 90 A | 90 A | - |
Rds On Drain Source Resistance | 41 mOhms | 33 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | 4 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | - |
Qg Gate Charge | 340 nC | 360 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.2 kW | 560 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HyperFET | 0 |
Packaging | Tube | Tube | Tube |
Series | X-Class | IXFN90N30 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 37 S | 40 S | - |
Fall Time | 8 ns | 40 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 55 ns | - |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 126 ns | 100 ns | - |
Typical Turn On Delay Time | 50 ns | 42 ns | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |
Height | - | 12.22 mm | - |
Length | - | 38.23 mm | - |
Type | - | HiPerFET Power MOSFET | - |
Width | - | 25.42 mm | - |