IXFP16N50P vs IXFP16N50P3 vs IXFP16N60P3

 
PartNumberIXFP16N50PIXFP16N50P3IXFP16N60P3
DescriptionMOSFET 500V 16AMOSFET Polar3 HiPerFET Power MOSFETMOSFET DISCMSFT NCHHIPERFET-POLAR3
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V600 V
Id Continuous Drain Current16 A16 A16 A
Rds On Drain Source Resistance400 mOhms360 mOhms470 mOhms
Vgs Gate Source Voltage30 V-30 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W-347 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTube-
Height9.15 mm--
Length10.66 mm--
SeriesIXFP16N50IXFP16N50-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.83 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min16 S--
Fall Time22 ns-8 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time25 ns-13 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time70 ns-42 ns
Typical Turn On Delay Time23 ns-20 ns
Unit Weight0.081130 oz0.012346 oz-
Vgs th Gate Source Threshold Voltage--3 V
Qg Gate Charge--36 nC
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