IXFP8N65X2 vs IXFP8N50PM vs IXFP8N50P3

 
PartNumberIXFP8N65X2IXFP8N50PMIXFP8N50P3
DescriptionMOSFET 650V/8A TO-220MOSFET N-CH 500V 4.4A TO-220MOSFET Polar3 HiPerFET Power MOSFETs
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance450 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFET-HyperFET
PackagingTube-Tube
Series650V Ultra Junction X2-IXFP8N50
Transistor Type1 N-Channel--
BrandIXYS--
Forward Transconductance Min3.6 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time17 ns--
Unit Weight--0.012346 oz
Package Case--TO-220-3
Id Continuous Drain Current--8 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--800 mOhms
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