PartNumber | IXFQ10N80P | IXFQ120N25X3 | IXFQ12N80P |
Description | MOSFET | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | MOSFET 12 Amps 800V 0.85 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-3P-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Configuration | Single | - | Single |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | IXFQ10N80 | - | IXFQ12N80 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.194007 oz | - | 0.194007 oz |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 360 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 25 ns |
Rise Time | - | - | 26 ns |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 12 A |
Vds Drain Source Breakdown Voltage | - | - | 800 V |
Rds On Drain Source Resistance | - | - | 850 mOhms |
Typical Turn Off Delay Time | - | - | 70 ns |
Typical Turn On Delay Time | - | - | 23 ns |
Channel Mode | - | - | Enhancement |