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| PartNumber | IXFR20N100P | IXFR20N120P | IXFR20N80P |
| Description | MOSFET 20 Amps 1000V 1 Rds | MOSFET 26 Amps 1200V 1 Rds | MOSFET 10 Amps 800V 0.5 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1.2 kV | 800 V |
| Id Continuous Drain Current | 11 A | 13 A | 10 A |
| Rds On Drain Source Resistance | 640 mOhms | 630 mOhms | 570 mOhms |
| Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 126 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 230 W | 290 W | 166 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.34 mm | 21.34 mm | 21.34 mm |
| Length | 16.13 mm | 16.13 mm | 16.13 mm |
| Series | IXFR20N100 | IXFR20N120 | IXFR20N80 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Polar Power MOSFET HiPerFET | - | - |
| Width | 5.21 mm | 5.21 mm | 5.21 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 45 ns | 70 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 37 ns | 45 ns | 24 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 56 ns | 72 ns | 70 ns |
| Typical Turn On Delay Time | 40 ns | 49 ns | 22 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |