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| PartNumber | IXFT140N10P | IXFT140N10P-TRL | IXFT140N10 |
| Description | MOSFET 140 Amps 100V 0.011 Rds | MOSFET IXFT140N10P TRL | |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-268-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 140 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 600 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | PolarHV | PolarHV HiPerFET |
| Packaging | Tube | Reel | Tube |
| Height | 5.1 mm | - | - |
| Length | 16.05 mm | - | - |
| Series | IXFT140N10 | - | IXFT140N10 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 14 mm | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 26 ns | - | 26 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 50 ns | - | 50 ns |
| Factory Pack Quantity | 30 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 85 ns | - | 85 ns |
| Typical Turn On Delay Time | 35 ns | - | 35 ns |
| Unit Weight | 0.158733 oz | - | 0.158733 oz |
| Package Case | - | - | TO-268-2 |
| Pd Power Dissipation | - | - | 600 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 140 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5 V |
| Rds On Drain Source Resistance | - | - | 11 mOhms |
| Qg Gate Charge | - | - | 155 nC |
| Forward Transconductance Min | - | - | 45 S |