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| PartNumber | IXFT15N100Q3 | IXFT15N100Q | IXFT15N100 |
| Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | MOSFET 15 Amps 1000V 0.725 Rds | MOSFET 15 Amps 1000V 0.7 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | TO-268-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 15 A | 15 A | - |
| Rds On Drain Source Resistance | 1.05 Ohms | 700 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 64 nC | - | - |
| Pd Power Dissipation | 690 W | 360 W | - |
| Configuration | Single | Single | Single |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFT15N100 | IXFT15N100 | IXFT15N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 250 ns | 27 ns | 30 ns |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.229281 oz | 0.158733 oz | 0.158733 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 5.1 mm | - |
| Length | - | 16.05 mm | - |
| Width | - | 14 mm | - |
| Fall Time | - | 14 ns | 30 ns |
| Typical Turn Off Delay Time | - | 67 ns | 120 ns |
| Typical Turn On Delay Time | - | 28 ns | 27 ns |
| Package Case | - | - | TO-268-2 |
| Pd Power Dissipation | - | - | 360 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 15 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 700 mOhms |