PartNumber | IXFT30N50P | IXFT30N50Q | IXFT30N50 |
Description | MOSFET 500V 30A | MOSFET 30 Amps 500V 0.16 Rds | MOSFET 30 Amps 500V 0.16 Rds |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-268-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 200 mOhms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 460 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | - | - |
Packaging | Tube | Tube | - |
Height | 5.1 mm | - | - |
Length | 16.05 mm | - | - |
Series | IXFT30N50 | IXFT30N50 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 14 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 27 S | - | - |
Fall Time | 24 ns | 20 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 24 ns | 42 ns | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 82 ns | 75 ns | - |
Typical Turn On Delay Time | 25 ns | 35 ns | - |
Unit Weight | 0.158733 oz | 0.158733 oz | - |
Package Case | - | TO-268-3 | - |
Pd Power Dissipation | - | 360 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 30 A | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Rds On Drain Source Resistance | - | 160 mOhms | - |