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| PartNumber | IXFT32N100XHV | IXFT320N10T2 | IXFT320N10T2-TRL |
| Description | MOSFET 1000V 32A TO-268HV Power MOSFET | MOSFET Trench T2 HiperFET Power MOSFET | MOSFET IXFT320N10T2 TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-268HV-3 | TO-268-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1000 V | 100 V | - |
| Id Continuous Drain Current | 32 A | 320 A | - |
| Rds On Drain Source Resistance | 220 mOhms | 3.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 130 nC | 430 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 890 W | 1 kW | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | TrenchT2 |
| Packaging | Tube | Tube | Reel |
| Series | X-Class | IXFT320N10 | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 14 S | 80 S | - |
| Fall Time | 12 ns | 73 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 46 ns | - |
| Factory Pack Quantity | 30 | 30 | 400 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | 73 ns | - |
| Typical Turn On Delay Time | 29 ns | 36 ns | - |
| Height | - | 5.1 mm | - |
| Length | - | 16.05 mm | - |
| Type | - | TrenchT2 HiperFET Power MOSFET | - |
| Width | - | 14 mm | - |
| Unit Weight | - | 0.229281 oz | - |