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| PartNumber | IXFT52N50P2 | IXFT52N30QTRL | IXFT52N30Q |
| Description | MOSFET PolarP2 Power MOSFET | MOSFET 300V 52A | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-268-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 52 A | - | - |
| Rds On Drain Source Resistance | 120 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 960 W | - | - |
| Configuration | Single | - | Single |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Series | IXFT52N50 | - | IXFT52N30 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | PolarP2 HiperFET Power MOSFET | - | - |
| Brand | IXYS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.158733 oz | - | 0.158733 oz |
| Package Case | - | - | TO-268-2 |
| Pd Power Dissipation | - | - | 360 W |
| Fall Time | - | - | 25 ns |
| Rise Time | - | - | 60 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 52 A |
| Vds Drain Source Breakdown Voltage | - | - | 300 V |
| Rds On Drain Source Resistance | - | - | 60 mOhms |
| Typical Turn Off Delay Time | - | - | 80 ns |
| Typical Turn On Delay Time | - | - | 27 ns |
| Forward Transconductance Min | - | - | 35 S |
| Channel Mode | - | - | Enhancement |