IXFT60N65X2HV vs IXFT60N50P3 vs IXFT60N25Q

 
PartNumberIXFT60N65X2HVIXFT60N50P3IXFT60N25Q
DescriptionMOSFET 650V/60A TO-268HVMOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFETMOSFET 60 Amps 250V 0.047 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268HV-3TO-268-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V500 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance52 mOhms100 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V5 V-
Vgs Gate Source Voltage10 V30 V-
Qg Gate Charge108 nC96 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation780 W1040 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Series650V Ultra Junction X2IXFT60N50IXFT60N25
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYS-
Forward Transconductance Min23 S60 S, 35 S-
Fall Time12 ns8 ns25 ns
Product TypeMOSFETMOSFET-
Rise Time23 ns16 ns60 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time63 ns-80 ns
Typical Turn On Delay Time30 ns-27 ns
Unit Weight-0.229281 oz0.158733 oz
Package Case--TO-268-2
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--60 A
Vds Drain Source Breakdown Voltage--250 V
Rds On Drain Source Resistance--47 mOhms
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