IXFX120N20 vs IXFX100N25 vs IXFX100N65X2

 
PartNumberIXFX120N20IXFX100N25IXFX100N65X2
DescriptionMOSFET 200V 120AMOSFET 100 Amps 250V 0.027 RdsMOSFET N-CH 650V 100A PLUS247
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V250 V-
Id Continuous Drain Current120 A100 A-
Rds On Drain Source Resistance17 mOhms27 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation560 W560 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHyperFETHyperFET-
PackagingTubeTube-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX120N20IXFX100N25-
Transistor Type1 N-Channel1 N-Channel-
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min77 S--
Fall Time35 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time65 ns55 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time110 ns110 ns-
Typical Turn On Delay Time40 ns42 ns-
Unit Weight0.257500 oz0.056438 oz-
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