IXFX120N25P vs IXFX120N20 vs IXFX120N25

 
PartNumberIXFX120N25PIXFX120N20IXFX120N25
DescriptionMOSFET 120 Amps 250 V 0.24 Ohm RdsMOSFET 200V 120AMOSFET 120 Amps 250V 0.022 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V200 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance24 mOhms17 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge185 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation700 W560 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX120N25IXFX120N20IXFX120N25
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT HiPerFET Power MOSFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min45 S77 S-
Fall Time33 ns35 ns35 ns
Product TypeMOSFETMOSFET-
Rise Time33 ns65 ns38 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time130 ns110 ns175 ns
Typical Turn On Delay Time30 ns40 ns35 ns
Unit Weight0.056438 oz0.257500 oz0.056438 oz
Package Case--TO-247-3
Pd Power Dissipation--560 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--120 A
Vds Drain Source Breakdown Voltage--250 V
Rds On Drain Source Resistance--22 mOhms
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