IXFX180N10 vs IXFX180N085 vs IXFX180N07

 
PartNumberIXFX180N10IXFX180N085IXFX180N07
DescriptionMOSFET 100V 180AMOSFET 180 Amps 85V 0.007 RdsMOSFET 70V 180A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V85 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance8 mOhms7 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation560 W560 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHyperFETHyperFETHyperFET
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX180N10IXFX180N085IXFX180N07
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min90 S--
Fall Time65 ns55 ns55 ns
Product TypeMOSFETMOSFET-
Rise Time90 ns90 ns90 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time140 ns140 ns140 ns
Typical Turn On Delay Time50 ns65 ns65 ns
Unit Weight0.257500 oz0.056438 oz0.257500 oz
Package Case--TO-247-3
Pd Power Dissipation--560 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--180 A
Vds Drain Source Breakdown Voltage--70 V
Rds On Drain Source Resistance--6 mOhms
Forward Transconductance Min--90 S
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