IXFX90N30 vs IXFX90N20Q vs IXFX90N30Q

 
PartNumberIXFX90N30IXFX90N20QIXFX90N30Q
DescriptionMOSFET 300V 90AMOSFET 200V 90A
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V200 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance33 mOhms22 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation560 W500 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHyperFETHyperFET-
PackagingTubeTube-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX90N30IXFX90N20-
Transistor Type1 N-Channel1 N-Channel-
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min70 S50 S-
Fall Time40 ns12 ns-
Product TypeMOSFETMOSFET-
Rise Time55 ns31 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns82 ns-
Typical Turn On Delay Time42 ns35 ns-
Unit Weight0.257500 oz0.257500 oz-
Top