IXGH36N60B3C1 vs IXGH36N60B3D1 vs IXGH36N60B3

 
PartNumberIXGH36N60B3C1IXGH36N60B3D1IXGH36N60B3
DescriptionIGBT Transistors 75Amps 600VIGBT Transistors 36 Amps 600VIGBT Transistors GenX3 600V IGBTs
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYY-
SeriesIXGH36N60IXGH36N60IXGH36N60
PackagingTubeTubeTube
BrandIXYSIXYSIXYS
Factory Pack Quantity303030
TradenameGenX3--
Unit Weight1.340411 oz0.229281 oz0.225753 oz
Technology-SiSi
Package / Case-TO-247AD-3TO-247AD-3
Mounting Style-Through Hole-
Configuration-Single-
Collector Emitter Voltage VCEO Max-600 V-
Collector Emitter Saturation Voltage-1.8 V-
Maximum Gate Emitter Voltage-20 V-
Continuous Collector Current at 25 C-200 A-
Pd Power Dissipation-250 W-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Gate Emitter Leakage Current-+/- 100 nA-
Product Type-IGBT TransistorsIGBT Transistors
Subcategory-IGBTsIGBTs
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