IXGH48N60C3C1 vs IXGH48N60C3 vs IXGH48N60C3D

 
PartNumberIXGH48N60C3C1IXGH48N60C3IXGH48N60C3D
DescriptionIGBT Transistors 75Amps 600VIGBT Transistors 48 Amps 600V
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiCSi-
Package / CaseTO-247AD-3TO-247AD-3-
SeriesIXGH48N60IXGH48N60GenX3
PackagingTubeTubeTube
BrandIXYSIXYS-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.211644 oz0.229281 oz0.229281 oz
Mounting Style-Through HoleThrough Hole
Configuration-SingleSingle
Collector Emitter Voltage VCEO Max-600 V-
Collector Emitter Saturation Voltage-2.3 V-
Maximum Gate Emitter Voltage-20 V+/- 20 V
Continuous Collector Current at 25 C-75 A-
Pd Power Dissipation-300 W-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Continuous Collector Current Ic Max-250 A75 A
Height-21.46 mm-
Length-16.26 mm-
Operating Temperature Range-- 55 C to + 150 C-
Width-5.3 mm-
Continuous Collector Current-75 A-
Gate Emitter Leakage Current-100 nA-
Tradename-GenX3-
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247AD (IXGH)
Power Max--300W
Reverse Recovery Time trr--25ns
Current Collector Ic Max--75A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--PT
Current Collector Pulsed Icm--250A
Vce on Max Vge Ic--2.5V @ 15V, 30A
Switching Energy--410μJ (on), 230μJ (off)
Gate Charge--77nC
Td on off 25°C--19ns/60ns
Test Condition--400V, 30A, 3 Ohm, 15V
Collector Emitter Voltage VCEO Max--600 V
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