IXGH48N60C3D1 vs IXGH48N60C3D vs IXGH48N60C3D1-KOREA

 
PartNumberIXGH48N60C3D1IXGH48N60C3DIXGH48N60C3D1-KOREA
DescriptionIGBT Transistors 30 Amps 600V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247AD-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V+/- 20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGH48N60GenX3-
PackagingTubeTube-
Continuous Collector Current Ic Max75 A75 A-
Height21.46 mm--
Length16.26 mm--
Width5.3 mm--
BrandIXYS--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.229281 oz0.229281 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247AD (IXGH)-
Power Max-300W-
Reverse Recovery Time trr-25ns-
Current Collector Ic Max-75A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-PT-
Current Collector Pulsed Icm-250A-
Vce on Max Vge Ic-2.5V @ 15V, 30A-
Switching Energy-410μJ (on), 230μJ (off)-
Gate Charge-77nC-
Td on off 25°C-19ns/60ns-
Test Condition-400V, 30A, 3 Ohm, 15V-
Collector Emitter Voltage VCEO Max-600 V-
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