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| PartNumber | IXGT32N120A3 | IXGT32N170 | IXGT32N170 T |
| Description | IGBT Modules GenX3 1200V IGBTs | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Modules | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.7 kV | - |
| Continuous Collector Current at 25 C | 75 A | 75 A | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Pd Power Dissipation | 300 W | 350 W | - |
| Package / Case | TO-268 | TO-268-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Tube | - |
| Height | 5.1 mm | 5.1 mm | - |
| Length | 14 mm | 16.05 mm | - |
| Series | IXGT32N120 | IXGT32N170 | - |
| Width | 16.05 mm | 14 mm | - |
| Brand | IXYS | IXYS | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | GenX3 | - | - |
| Unit Weight | 0.158733 oz | 0.158733 oz | - |
| Technology | - | Si | - |
| Collector Emitter Saturation Voltage | - | 2.5 V | - |
| Continuous Collector Current Ic Max | - | 200 A | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Continuous Collector Current | - | 75 A | - |