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| PartNumber | IXTA08N100D2 | IXTA08N100D2HV | IXTA08N100D2-TRL |
| Description | MOSFET N-CH MOSFETS (D2) 1000V 800MA | MOSFET DISCMOSFET N-CH DEPL MODE-D2 | MOSFET IXTA08N100D2 TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263HV-2 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 800 mA | 800 mA | - |
| Rds On Drain Source Resistance | 21 Ohms | 21 Ohms | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | Reel |
| Series | IXTA08N100 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 14.6 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 60 W | - |
| Channel Mode | - | Depletion | - |
| Fall Time | - | 48 ns | - |
| Rise Time | - | 57 ns | - |
| Typical Turn Off Delay Time | - | 34 ns | - |
| Typical Turn On Delay Time | - | 28 ns | - |
| Tradename | - | - | 0 |