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| PartNumber | IXTA1R6N100D2 | IXTA1R6N100D2HV | IXTA1R6N100D2-TRL |
| Description | MOSFET N-CH MOSFETS (D2) 1000V 800MA | MOSFET DISCMOSFET N-CH DEPL MODE-D2 | MOSFET IXTA1R6N100D2 TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 1.6 A | - | - |
| Rds On Drain Source Resistance | 10 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | Tube | Reel |
| Height | 4.83 mm | - | - |
| Length | 9.65 mm | - | - |
| Series | IXTA1R6N100 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Depletion Mode MOSFET | - | - |
| Width | 10.41 mm | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 0.65 S | - | - |
| Fall Time | 41 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 65 ns | - | - |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | - | - |
| Typical Turn On Delay Time | 27 ns | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Tradename | - | 0 | 0 |