PartNumber | IXTA3N50D2 | IXTA3N50D2-TRL | IXTA3N50P |
Description | MOSFET N-CH MOSFETS (D2) 500V 3A | MOSFET IXTA3N50D2 TRL | IGBT Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 3 A | - | - |
Rds On Drain Source Resistance | 1.5 Ohms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 40 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | - | Single |
Packaging | Tube | Reel | Tube |
Height | 4.83 mm | - | - |
Length | 9.65 mm | - | - |
Series | IXTA3N50 | - | IXTA3N50 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | Depletion Mode MOSFET | - | - |
Width | 10.41 mm | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 1.3 S | - | - |
Fall Time | 42 ns | - | 12 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 71 ns | - | 15 ns |
Factory Pack Quantity | 50 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 56 ns | - | 38 ns |
Typical Turn On Delay Time | 27 ns | - | 15 ns |
Unit Weight | 0.056438 oz | - | 0.056438 oz |
Tradename | - | TrenchHV | PolarHV |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 70 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 3.6 A |
Vds Drain Source Breakdown Voltage | - | - | 500 V |
Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
Rds On Drain Source Resistance | - | - | 2 Ohms |
Qg Gate Charge | - | - | 9.3 nC |
Forward Transconductance Min | - | - | 2.5 S |
Channel Mode | - | - | Enhancement |