IXTA3N50D2 vs IXTA3N50D2-TRL vs IXTA3N50P

 
PartNumberIXTA3N50D2IXTA3N50D2-TRLIXTA3N50P
DescriptionMOSFET N-CH MOSFETS (D2) 500V 3AMOSFET IXTA3N50D2 TRLIGBT Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge40 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation125 W--
ConfigurationSingle-Single
PackagingTubeReelTube
Height4.83 mm--
Length9.65 mm--
SeriesIXTA3N50-IXTA3N50
Transistor Type1 N-Channel-1 N-Channel
TypeDepletion Mode MOSFET--
Width10.41 mm--
BrandIXYSIXYS-
Forward Transconductance Min1.3 S--
Fall Time42 ns-12 ns
Product TypeMOSFETMOSFET-
Rise Time71 ns-15 ns
Factory Pack Quantity50800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time56 ns-38 ns
Typical Turn On Delay Time27 ns-15 ns
Unit Weight0.056438 oz-0.056438 oz
Tradename-TrenchHVPolarHV
Package Case--TO-252-3
Pd Power Dissipation--70 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--3.6 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--2 Ohms
Qg Gate Charge--9.3 nC
Forward Transconductance Min--2.5 S
Channel Mode--Enhancement
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