IXTA6N50D2 vs IXTA6N50D2-TRL vs IXTA6N50P

 
PartNumberIXTA6N50D2IXTA6N50D2-TRLIXTA6N50P
DescriptionMOSFET N-CH MOSFETS (D2) 500V 6AMOSFET IXTA6N50D2 TRLIGBT Transistors MOSFET 6 Amps 500V 1.1 Ohms Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance550 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge96 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
PackagingTubeReelTube
Height4.83 mm--
Length9.65 mm--
SeriesIXTA6N50-IXTA6N50
Transistor Type1 N-Channel-1 N-Channel
TypeDepletion Mode MOSFET--
Width10.41 mm--
BrandIXYSIXYS-
Forward Transconductance Min2.8 S--
Fall Time43 ns-26 ns
Product TypeMOSFETMOSFET-
Rise Time72 ns-28 ns
Factory Pack Quantity50800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time82 ns-65 ns
Typical Turn On Delay Time28 ns-26 ns
Unit Weight0.056438 oz-0.056438 oz
Tradename-0PolarHV
Package Case--TO-252-3
Pd Power Dissipation--100 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--6 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--5 V
Rds On Drain Source Resistance--1.1 Ohms
Qg Gate Charge--14.6 nC
Forward Transconductance Min--3.5 S
Channel Mode--Enhancement
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