PartNumber | IXTA6N50D2 | IXTA6N50D2-TRL | IXTA6N50P |
Description | MOSFET N-CH MOSFETS (D2) 500V 6A | MOSFET IXTA6N50D2 TRL | IGBT Transistors MOSFET 6 Amps 500V 1.1 Ohms Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Rds On Drain Source Resistance | 550 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 96 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | Single |
Packaging | Tube | Reel | Tube |
Height | 4.83 mm | - | - |
Length | 9.65 mm | - | - |
Series | IXTA6N50 | - | IXTA6N50 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | Depletion Mode MOSFET | - | - |
Width | 10.41 mm | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 2.8 S | - | - |
Fall Time | 43 ns | - | 26 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 72 ns | - | 28 ns |
Factory Pack Quantity | 50 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 82 ns | - | 65 ns |
Typical Turn On Delay Time | 28 ns | - | 26 ns |
Unit Weight | 0.056438 oz | - | 0.056438 oz |
Tradename | - | 0 | PolarHV |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 100 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 6 A |
Vds Drain Source Breakdown Voltage | - | - | 500 V |
Vgs th Gate Source Threshold Voltage | - | - | 5 V |
Rds On Drain Source Resistance | - | - | 1.1 Ohms |
Qg Gate Charge | - | - | 14.6 nC |
Forward Transconductance Min | - | - | 3.5 S |
Channel Mode | - | - | Enhancement |