 | | | |
| PartNumber | IXTH1N250 | IXTH1N200P3 | IXTH1N200P3HV |
| Description | MOSFET 1 Amps 2500V 40 Rds | MOSFET 2000V/1A HV Power MOSFET, TO-247 | MOSFET 2000V/1A HV Power MOSFET, TO-247HV |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 2.5 kV | 2 kV | 2 kV |
| Id Continuous Drain Current | 1.5 A | 1 A | 1 A |
| Rds On Drain Source Resistance | 40 Ohms | 40 Ohms | 40 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 41 nC | 23.5 nC | 23.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 125 W | 125 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXTH1N250 | Polar3 | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Power MOSFET | - | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 1 mS | 400 mS | 400 mS |
| Fall Time | 39 ns | 80 ns | 80 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | 26 ns | 26 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 132 ns | 37 ns | 37 ns |
| Typical Turn On Delay Time | 69 ns | 16 ns | 16 ns |
| Unit Weight | 0.229281 oz | 0.056438 oz | - |