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| PartNumber | IXTH20N65X | IXTH20N60 | IXTH20N60A |
| Description | MOSFET 650V/9A Power MOSFET | MOSFET 20 Amps 600V 0.35 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 210 mOhms | 350 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 35 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 320 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | - | - |
| Packaging | Tube | Tube | - |
| Series | X-Class | IXTH20N60 | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 9 S | 18 S | - |
| Fall Time | 22 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 43 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 46 ns | 70 ns | - |
| Typical Turn On Delay Time | 18 ns | 20 ns | - |
| Unit Weight | 0.056438 oz | 0.229281 oz | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 5.3 mm | - |