IXTH30N25L2 vs IXTH300N04T2 vs IXTH30N25

 
PartNumberIXTH30N25L2IXTH300N04T2IXTH30N25
DescriptionDiscrete Semiconductor Modules Disc Mosfet N-CH Linear L2 TO-247ADMOSFET Trench T2 Power MOSFETMOSFET 30 Amps 250V 0.075 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETMOSFET
RoHSY-Y
ProductPower MOSFET Modules--
TypeLinear L2--
Vgs Gate Source Voltage20 V-20 V
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingTubeTubeTube
ConfigurationSingle-Single
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time23 ns-17 ns
Id Continuous Drain Current30 A300 A30 A
Pd Power Dissipation355 W-200 W
Product TypeDiscrete Semiconductor ModulesMOSFETMOSFET
Rds On Drain Source Resistance140 mOhms2.5 mOhms75 mOhms
Rise Time78 ns-19 ns
Factory Pack Quantity303030
SubcategoryDiscrete Semiconductor ModulesMOSFETsMOSFETs
TradenameLinear L2HiPerFET-
Typical Turn Off Delay Time65 ns-79 ns
Typical Turn On Delay Time22 ns-19 ns
Vds Drain Source Breakdown Voltage250 V40 V250 V
Vgs th Gate Source Threshold Voltage2.5 V--
Technology-SiSi
Series-IXTH300N04IXTH30N25
Unit Weight-0.056438 oz0.229281 oz
Number of Channels--1 Channel
Channel Mode--Enhancement
Height--21.46 mm
Length--16.26 mm
Transistor Type--1 N-Channel
Width--5.3 mm
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