IXTK102N30P vs IXTK100N25P vs IXTK102N65X2

 
PartNumberIXTK102N30PIXTK100N25PIXTK102N65X2
DescriptionMOSFET 102 Amps 300V 0.033 RdsMOSFET 100 Amps 250V 0.027 RdsMOSFET N-CH 650V 102A X2 TO-264
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V250 V-
Id Continuous Drain Current102 A100 A-
Rds On Drain Source Resistance33 mOhms27 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge224 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation700 W600 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePolarHT--
PackagingTubeTube-
Height26.59 mm26.59 mm-
Length20.29 mm20.29 mm-
SeriesIXTK102N30IXTK100N25-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHT Power MOSFET--
Width5.31 mm5.31 mm-
BrandIXYSIXYS-
Forward Transconductance Min45 S--
Fall Time30 ns28 ns-
Product TypeMOSFETMOSFET-
Rise Time28 ns26 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time130 ns100 ns-
Typical Turn On Delay Time30 ns25 ns-
Unit Weight0.352740 oz0.352740 oz-
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