PartNumber | IXTN600N04T2 | IXTN60N50L2 | IXTN61N50 |
Description | Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 60 Amps 500V | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Type | TrenchT2 GigaMOS | Linear Power MOSFET | - |
Mounting Style | SMD/SMT | Chassis Mount | - |
Package / Case | SOT-227B | SOT-227-4 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Series | IXTN600N04 | IXTN60N50 | - |
Packaging | Tube | Tube | - |
Output Current | 600 A | - | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | N-Channel | - |
Fall Time | 250 ns | 38 ns | - |
Pd Power Dissipation | 940 W | 735 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Rise Time | 20 ns | 40 ns | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Tradename | HiPerFET | Linear L2 | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Id Continuous Drain Current | - | 53 A | - |
Rds On Drain Source Resistance | - | 100 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 610 nC | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Height | - | 12.22 mm | - |
Length | - | 38.23 mm | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 25.42 mm | - |
Forward Transconductance Min | - | 18 S | - |
Typical Turn Off Delay Time | - | 165 ns | - |
Typical Turn On Delay Time | - | 40 ns | - |