IXTP08N100D2 vs IXTP08N100P vs IXTP08N120P

PartNumber	IXTP08N100D2	IXTP08N100P	IXTP08N120P
Description	MOSFET N-CH MOSFETS 1000V 800MA	MOSFET 0.8 Amps 1000V 20 Rds	MOSFET 0.8 Amps 1200V 25 Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220-3	TO-220-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	1 kV	1 kV	1.2 kV
Id Continuous Drain Current	800 mA	800 mA	800 mA
Rds On Drain Source Resistance	21 Ohms	20 Ohms	25 Ohms
Vgs Gate Source Voltage	20 V	20 V	20 V
Qg Gate Charge	14.6 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	60 W	42 W	50 W
Configuration	Single	Single	Single
Channel Mode	Depletion	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Series	IXTP08N100	IXTP08N100	IXTP08N120
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	IXYS	IXYS	IXYS
Forward Transconductance Min	330 mS	-	-
Fall Time	48 ns	34 ns	24 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	57 ns	37 ns	26 ns
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	34 ns	35 ns	55 ns
Typical Turn On Delay Time	28 ns	19 ns	20 ns
Unit Weight	0.081130 oz	0.081130 oz	0.012346 oz
Height	-	9.15 mm	9.15 mm
Length	-	10.66 mm	10.66 mm
Width	-	4.83 mm	4.83 mm