IXTP42N25P vs IXTP44N10T vs IXTP42N15T

 
PartNumberIXTP42N25PIXTP44N10TIXTP42N15T
DescriptionMOSFET 42 Amps 250V 0.084 RdsMOSFET 44 Amps 100V 25.0 RdsMOSFET 42 Amps 150V 0.045 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V100 V150 V
Id Continuous Drain Current42 A44 A42 A
Rds On Drain Source Resistance84 mOhms30 mOhms45 mOhms
Vgs th Gate Source Threshold Voltage5.5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge70 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation300 W130 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenamePolarHTHiPerFETHiPerFET
PackagingTubeTubeTube
Height16 mm9.15 mm-
Length10.66 mm10.66 mm-
SeriesIXTP42N25IXTP44N10-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT Power MOSFET--
Width4.83 mm4.83 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min12 S--
Fall Time30 ns32 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time28 ns47 ns-
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time81 ns36 ns-
Typical Turn On Delay Time24 ns21 ns-
Unit Weight0.081130 oz0.081130 oz0.081130 oz
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