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| PartNumber | IXTP6N50D2 | IXTP6N50P TK5A50D | IXTP6N50P |
| Description | MOSFET N-CH MOSFETS (D2) 500V 6A | MOSFET 6 Amps 500V 1.1 Ohms Rds | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 550 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 96 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Packaging | Tube | - | Tube |
| Height | 16 mm | - | - |
| Length | 10.66 mm | - | - |
| Series | IXTP6N50 | - | IXTP6N50 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | Depletion Mode MOSFET | - | - |
| Width | 4.83 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 2.8 S | - | - |
| Fall Time | 43 ns | - | 26 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 72 ns | - | 28 ns |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 82 ns | - | 65 ns |
| Typical Turn On Delay Time | 28 ns | - | 26 ns |
| Unit Weight | 0.081130 oz | - | 0.081130 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 100 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 6 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Rds On Drain Source Resistance | - | - | 1.1 Ohms |
| Forward Transconductance Min | - | - | 5.5 S |
| Channel Mode | - | - | Enhancement |