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| PartNumber | IXTQ60N20T | IXTQ60N10T | IXTQ60N20L2 |
| Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3) | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3) | MOSFET LINEAR L2 SERIES MOSFET 200V 60A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | Power MOSFET Modules | - |
| Type | Trench | Trench | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-3P | TO-3P | TO-3P-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 22 ns | 37 ns | - |
| Id Continuous Drain Current | 60 A | 60 A | 60 A |
| Pd Power Dissipation | 500 W | 176 W | 540 W |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| Rds On Drain Source Resistance | 40 mOhms | 18 mOhms | 45 mOhms |
| Rise Time | 13 ns | 40 ns | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
| Tradename | Trench | Trench | - |
| Typical Turn Off Delay Time | 33 ns | 43 ns | 90 ns |
| Typical Turn On Delay Time | 22 ns | 27 ns | 26 ns |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | 200 V |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | - |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Channel Mode | - | - | Enhancement |
| Series | - | - | IXTQ60N20 |
| Transistor Type | - | - | 1 N-Channel |
| Unit Weight | - | - | 0.194007 oz |