| PartNumber | IXTT11P50 | IXTT110N10L2 | IXTT110N10P |
| Description | MOSFET 11 Amps 500V 0.75 Rds | MOSFET Linear Extended FBSOA Power MOSFET | MOSFET 110 Amps 100V 0.015 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 100 V | 100 V |
| Id Continuous Drain Current | 11 A | 110 A | 110 A |
| Rds On Drain Source Resistance | 750 mOhms | 18 mOhms | 15 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 130 nC | 260 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 300 W | 600 W | 480 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 5.1 mm | - | 5.1 mm |
| Length | 14 mm | - | 16.05 mm |
| Series | IXTT11P50 | IXTT110N10 | IXTT110N10 |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
| Type | Standard Power MOSFET | - | - |
| Width | 16.05 mm | - | 14 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 5 S | 45 S | - |
| Fall Time | 35 ns | 24 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 130 ns | 25 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 99 ns | 65 ns |
| Typical Turn On Delay Time | 33 ns | 28 ns | 21 ns |
| Unit Weight | 0.158733 oz | 0.229281 oz | 0.158733 oz |