PartNumber | IXTT16N20D2 | IXTT16N50D2 | IXTT16N10D2 |
Description | MOSFET D2 Depletion Mode Power MOSFETs | MOSFET D2 Depletion Mode Power MOSFETs | MOSFET D2 Depletion Mode Power MOSFETs |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 500 V | 100 V |
Id Continuous Drain Current | 16 A | 16 A | 16 A |
Rds On Drain Source Resistance | 73 mOhms | 300 mOhms | 64 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 208 nC | 199 nC | 225 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 695 W | 695 W | 830 W |
Configuration | Single | Single | Single |
Channel Mode | Depletion | Depletion | Depletion |
Packaging | Tube | Tube | Tube |
Series | IXTT16N20 | IXTT16N50 | IXTT16N10 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Fall Time | 135 ns | 220 ns | 70 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 130 ns | 173 ns | 43 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 270 ns | 203 ns | 340 ns |
Typical Turn On Delay Time | 46 ns | 50 ns | 45 ns |
Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Forward Transconductance Min | - | 7 S | 7 S |