IXTT16N20D2 vs IXTT16N50D2 vs IXTT16N10D2

 
PartNumberIXTT16N20D2IXTT16N50D2IXTT16N10D2
DescriptionMOSFET D2 Depletion Mode Power MOSFETsMOSFET D2 Depletion Mode Power MOSFETsMOSFET D2 Depletion Mode Power MOSFETs
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSE-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268-3TO-268-3TO-268-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V500 V100 V
Id Continuous Drain Current16 A16 A16 A
Rds On Drain Source Resistance73 mOhms300 mOhms64 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge208 nC199 nC225 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 175 C
Pd Power Dissipation695 W695 W830 W
ConfigurationSingleSingleSingle
Channel ModeDepletionDepletionDepletion
PackagingTubeTubeTube
SeriesIXTT16N20IXTT16N50IXTT16N10
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Fall Time135 ns220 ns70 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time130 ns173 ns43 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time270 ns203 ns340 ns
Typical Turn On Delay Time46 ns50 ns45 ns
Unit Weight0.229281 oz0.229281 oz0.229281 oz
Vgs th Gate Source Threshold Voltage-2 V-
Forward Transconductance Min-7 S7 S
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