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| PartNumber | IXTT1N250HV-TRL | IXTT1N100 | IXTT1N250HV |
| Description | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET 1 Amps 1000V | MOSFET N-CH 2500V 1.5A TO-268HV |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-268S-3 | TO-268-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 39 ns | 18 ns | - |
| Id Continuous Drain Current | 1.5 A | 1.5 A | - |
| Pd Power Dissipation | 250 W | 60 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 40 Ohms | 11 Ohms | - |
| Rise Time | 25 ns | 19 ns | - |
| Factory Pack Quantity | 400 | 30 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Typical Turn Off Delay Time | 132 ns | 20 ns | - |
| Typical Turn On Delay Time | 69 ns | 18 ns | - |
| Vds Drain Source Breakdown Voltage | 2500 V | 1 kV | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 5.1 mm | - |
| Length | - | 16.05 mm | - |
| Series | - | IXTT1N100 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 14 mm | - |
| Unit Weight | - | 0.158733 oz | - |