PartNumber | IXTT40N50L2-TRL | IXTT40N50L2 | IXTT440N04T4HV |
Description | Discrete Semiconductor Modules LinearL2T Power MOSFET w/Extended FBSOA | MOSFET 40 Amps 500V | MOSFET 40V/440A TrenchT4 Power MOSFET |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | Linear L2 | Linear L2 Power MOSFET | - |
Vgs Gate Source Voltage | 20 V | 20 V | 15 V |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Packaging | Reel | Tube | Tube |
Configuration | Single | - | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 44 ns | 44 ns | 74 ns |
Id Continuous Drain Current | 40 A | 40 A | 440 A |
Pd Power Dissipation | 540 W | 540 W | 940 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 170 mOhms | 170 mOhms | 1.25 mOhms |
Rise Time | 133 ns | 133 ns | 250 ns |
Factory Pack Quantity | 400 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | LinearL2T | Linear L2 | HiPerFET |
Typical Turn Off Delay Time | 127 ns | 127 ns | 120 ns |
Typical Turn On Delay Time | 50 ns | 50 ns | 44 ns |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 40 V |
Vgs th Gate Source Threshold Voltage | 2.5 V | 4.5 V | 2 V |
Technology | - | Si | Si |
Qg Gate Charge | - | 320 nC | 480 nC |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 5.1 mm | - |
Length | - | 14 mm | - |
Series | - | IXTT40N50 | - |
Width | - | 16.05 mm | - |
Forward Transconductance Min | - | 11 S | 110 S |
Unit Weight | - | 0.229281 oz | 0.141096 oz |
Number of Channels | - | - | 1 Channel |
Transistor Type | - | - | 1 N-Channel |