IXTT60N20L2 vs IXTT64N25P vs IXTT60N10

 
PartNumberIXTT60N20L2IXTT64N25PIXTT60N10
DescriptionMOSFET LINEAR L2 SERIES MOSFET 200V 60AMOSFET 64 Amps 250V 0.049 RdsMOSFET 60 Amps 100 V 0.033 W Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268-3TO-268-3TO-268-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V250 V100 V
Id Continuous Drain Current60 A64 A80 A
Rds On Drain Source Resistance45 mOhms49 mOhms20 mOhms
Vgs th Gate Source Threshold Voltage4.5 V5 V-
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge255 nC105 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation540 W400 W300 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameLinear L2PolarHT-
PackagingTubeTubeTube
Height5.1 mm5.1 mm5.1 mm
Length14 mm14 mm16.05 mm
SeriesIXTT60N20IXTT64N25IXTT60N10
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeLinear L2 Power MOSFETPolarHT Power MOSFET-
Width16.05 mm16.05 mm14 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min35 S20 S-
Fall Time18 ns20 ns18 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time23 ns23 ns20 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time90 ns60 ns70 ns
Typical Turn On Delay Time26 ns21 ns20 ns
Unit Weight0.158733 oz0.158733 oz0.158733 oz
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