IXTT96N20P-TRL vs IXTT96N20P vs IXTT96N15P

 
PartNumberIXTT96N20P-TRLIXTT96N20PIXTT96N15P
DescriptionDiscrete Semiconductor Modules PolarHT Power MOSFETMOSFET 96 Amps 200V 0.024 RdsMOSFET 96 Amps 150V 0.024 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETMOSFET
RoHSYYY
ProductPower MOSFET Modules--
TypePolarHTPolarHT Power MOSFET-
Vgs Gate Source Voltage20 V20 V20 V
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268-3TO-268-3TO-268-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingReelTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time30 ns30 ns18 ns
Id Continuous Drain Current96 A96 A96 A
Pd Power Dissipation600 W600 W480 W
Product TypeDiscrete Semiconductor ModulesMOSFETMOSFET
Rds On Drain Source Resistance24 mOhms24 mOhms24 mOhms
Rise Time30 ns30 ns33 ns
Factory Pack Quantity4003030
SubcategoryDiscrete Semiconductor ModulesMOSFETsMOSFETs
TradenamePolarHTPolarHT-
Typical Turn Off Delay Time75 ns75 ns66 ns
Typical Turn On Delay Time28 ns28 ns30 ns
Vds Drain Source Breakdown Voltage200 V200 V150 V
Vgs th Gate Source Threshold Voltage2.5 V5 V-
Technology-SiSi
Number of Channels-1 Channel1 Channel
Qg Gate Charge-145 nC-
Channel Mode-EnhancementEnhancement
Height-5.1 mm5.1 mm
Length-14 mm16.05 mm
Series-IXTT96N20IXTT96N15
Transistor Type-1 N-Channel1 N-Channel
Width-16.05 mm14 mm
Forward Transconductance Min-40 S-
Unit Weight-0.158733 oz0.158733 oz
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