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| PartNumber | IXTY1R6N100D2-TRL | IXTY1R6N100D2 | IXTY1R6N50D2 |
| Description | Discrete Semiconductor Modules Depletion Mode MOSFET | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | MOSFET N-CH 500V 1.6A DPAK |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | Depletion Mode | Depletion Mode MOSFET | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 41 ns | 41 ns | - |
| Id Continuous Drain Current | 1.6 A | 1.6 A | - |
| Pd Power Dissipation | 100 W | 100 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 10 Ohms | 10 Ohms | - |
| Rise Time | 65 ns | 65 ns | - |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Typical Turn Off Delay Time | 34 ns | 34 ns | - |
| Typical Turn On Delay Time | 27 ns | 27 ns | - |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
| Vgs th Gate Source Threshold Voltage | - 4.5 V | - | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Qg Gate Charge | - | 27 nC | - |
| Height | - | 2.38 mm | - |
| Length | - | 6.22 mm | - |
| Series | - | IXTY1R6N100 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 6.73 mm | - |
| Forward Transconductance Min | - | 0.65 S | - |
| Unit Weight | - | 0.012346 oz | - |