PartNumber | IXTY26P10T-TRL | IXTY26P10T | IXTY24N15T |
Description | Discrete Semiconductor Modules TrenchP Power MOSFET | MOSFET TrenchP Power MOSFET | MOSFET N-CH 150V 24A TO-252 |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Type | TrenchP | TrenchP Power MOSFET | - |
Vgs Gate Source Voltage | 15 V | 15 V | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Reel | Tube | - |
Configuration | Single | - | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | P-Channel | P-Channel | - |
Fall Time | 11 ns | 11 ns | - |
Id Continuous Drain Current | - 26 A | 26 A | - |
Pd Power Dissipation | 150 W | 150 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | - |
Rise Time | 15 ns | 15 ns | - |
Factory Pack Quantity | 2500 | 70 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Tradename | TrenchP | TrenchP | - |
Typical Turn Off Delay Time | 37 ns | 37 ns | - |
Typical Turn On Delay Time | 20 ns | 20 ns | - |
Vds Drain Source Breakdown Voltage | - 100 V | 100 V | - |
Vgs th Gate Source Threshold Voltage | - 4.5 V | 4.5 V | - |
Technology | - | Si | - |
Qg Gate Charge | - | 52 nC | - |
Channel Mode | - | Enhancement | - |
Height | - | 2.38 mm | - |
Length | - | 6.22 mm | - |
Series | - | IXTY26P10 | - |
Width | - | 6.73 mm | - |
Forward Transconductance Min | - | 10 S | - |
Unit Weight | - | 0.081130 oz | - |