 |  |  | |
| PartNumber | IXYA20N120A4HV | IXYA15N65C3D1 | IXYA20N120C3HV |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-263D2 | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | - |
| Product | Power Semiconductor Modules | - | - |
| Type | GenX4 | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263HV-3 | TO-263-3 | TO-263HV-2 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Tube | - | - |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 160 ns | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Pd Power Dissipation | 375 W | 200 W | 278 W |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Rise Time | 54 ns | - | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | - | - |
| Typical Turn Off Delay Time | 275 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Technology | - | Si | Si |
| Collector Emitter Voltage VCEO Max | - | 650 V | 1.2 kV |
| Collector Emitter Saturation Voltage | - | 1.96 V | 3.4 V |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Continuous Collector Current at 25 C | - | 38 A | 40 A |
| Continuous Collector Current Ic Max | - | 80 A | 96 A |
| Gate Emitter Leakage Current | - | 100 nA | 100 nA |