PartNumber | IXYH10N170C | IXYH10N170CV1 | IXYH10N450CHV |
Description | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | IGBT Transistors 1700V/10A XPT IGBT w/ Diode | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
RoHS | Y | Y | - |
Product | Power Semiconductor Modules | - | - |
Type | High Voltage | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247AD-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | - |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 70 ns | - | - |
Id Continuous Drain Current | 36 A | - | - |
Pd Power Dissipation | 280 W | 280 W | - |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
Rise Time | 17 ns | - | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | Discrete Semiconductor Modules | IGBTs | - |
Tradename | XPT | - | - |
Typical Turn Off Delay Time | 130 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Vds Drain Source Breakdown Voltage | 1700 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Technology | - | Si | - |
Collector Emitter Voltage VCEO Max | - | 1700 V | - |
Collector Emitter Saturation Voltage | - | 4.1 V | - |
Maximum Gate Emitter Voltage | - | 20 V | - |
Continuous Collector Current at 25 C | - | 36 A | - |
Gate Emitter Leakage Current | - | 100 nA | - |