IXYH16N170CV1 vs IXYH16N170C vs IXYH16N250C

 
PartNumberIXYH16N170CV1IXYH16N170CIXYH16N250C
DescriptionDiscrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247ADDiscrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247ADIGBT 2500V 35A TO247AD
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
RoHSYY-
ProductDiode Power ModulesDiode Power Modules-
TypeHigh VoltageHigh Voltage-
Vgs Gate Source Voltage20 V20 V-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-ChannelN-Channel-
Fall Time120 ns120 ns-
Id Continuous Drain Current40 A40 A-
Pd Power Dissipation310 W310 W-
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
Rise Time19 ns19 ns-
Factory Pack Quantity3030-
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
TradenameXPTXPT-
Typical Turn Off Delay Time140 ns140 ns-
Typical Turn On Delay Time11 ns11 ns-
Vds Drain Source Breakdown Voltage1700 V1700 V-
Vgs th Gate Source Threshold Voltage3 V3 V-
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