IXYH40N65C3H1 vs IXYH40N65C3 vs IXYH40N65C3D1

 
PartNumberIXYH40N65C3H1IXYH40N65C3IXYH40N65C3D1
DescriptionIGBT Transistors 650V/80A XPT Copacked TO-247IGBT Transistors 650V/80A XPT C3-Class TO-247IGBT Transistors DISC IGBT XPT-GENX3
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247AD-3TO-247AD-3TO-247AD-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.85 V1.85 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C80 A80 A-
Pd Power Dissipation300 W300 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesIXYH40N65IXYH40N65-
PackagingTubeTubeTube
Continuous Collector Current Ic Max80 A80 A-
BrandIXYSIXYSIXYS
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
TradenameXPTXPTXPT, GenX3
Unit Weight1.340411 oz1.340411 oz-
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