IXYH80N90C3 vs IXYH82N120C3 vs IXYH88N30P

 
PartNumberIXYH80N90C3IXYH82N120C3IXYH88N30P
DescriptionIGBT Transistors DISC IGBT XPT-GENX3IGBT Transistors XPT IGBT C3-Class 1200V/160A
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough HoleThrough Hole-
SeriesPlanarIXYH82N120-
BrandIXYSIXYS-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.225753 oz1.340411 oz-
Configuration-Single-
Collector Emitter Voltage VCEO Max-1200 V-
Collector Emitter Saturation Voltage-2.75 V-
Maximum Gate Emitter Voltage-30 V-
Continuous Collector Current at 25 C-160 A-
Pd Power Dissipation-1040 W-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Packaging-Tube-
Continuous Collector Current Ic Max-160 A-
Gate Emitter Leakage Current-100 nA-
Tradename-XPT-
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