IXYK100N120C3 vs IXYK100N65B3D1 vs IXYK120N120B3

PartNumber	IXYK100N120C3	IXYK100N65B3D1	IXYK120N120B3
Description	IGBT Transistors 1200V 188A XPT IGBT	IGBT Transistors DISC IGBT XPT-GENX3	IGBT Transistors DISC IGBT XPT-GENX3
Manufacturer	IXYS	IXYS	IXYS
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	-	-
Technology	Si	Si	Si
Package / Case	TO-264-3	TO-264-3	TO-264-3
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	650 V	1.2 kV
Collector Emitter Saturation Voltage	2.9 V	1.53 V	1.8 V
Maximum Gate Emitter Voltage	30 V	20 V	20 V
Continuous Collector Current at 25 C	188 A	225 A	320 A
Pd Power Dissipation	1150 W	830 W	1.5 kW
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Series	IXYK100N120	-	-
Packaging	Tube	-	-
Continuous Collector Current Ic Max	188 A	460 A	800 A
Brand	IXYS	IXYS	IXYS
Gate Emitter Leakage Current	100 nA	100 nA	200 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	25	25	25
Subcategory	IGBTs	IGBTs	IGBTs
Tradename	XPT	-	-
Unit Weight	0.373904 oz	-	-