PartNumber | IXYP10N65B3D1 | IXYP10N65C3D1 | IXYP10N65C3 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT 650V 30A 160W TO220 |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
RoHS | Y | Y | - |
Product | Diode Power Modules | - | - |
Type | GenX3 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Packaging | Tube | Tube | - |
Configuration | Single | - | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 30 ns | - | - |
Id Continuous Drain Current | 32 A | - | - |
Pd Power Dissipation | 160 W | - | - |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
Rise Time | 29 ns | - | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | Discrete Semiconductor Modules | IGBTs | - |
Tradename | XPT | XPT, GenX3 | - |
Typical Turn Off Delay Time | 125 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Technology | - | Si | - |
Series | - | Planar | - |